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参数资料
| 型号： | TFDT5500-TR3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 摇控器 |
| 英文描述： | INFRARED, TRANSMITTER/RECEIVER IC, SMA8 |
| 封装： | MODULE-8 |
| 文件页数： | 10/14页 |
| 文件大小： | 181K |
| 代理商： | TFDT5500-TR3 |
TFDU5100/TFDS5500/TFDT5500
Vishay Semiconductors
Not for new design
Rev. 1, 01-Apr-99
5 (13)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 82516
Optoelectronic Characteristics
Tamb = 25_C, VCC = 3.0 V to 5.25 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Receiver
Minimum Detection
Threshold Irradiance
SIR Mode
TFDS5500/TFDT5500
9.6 kbit/s to 115.2 kbit/s, 3.0 V
l = 850 nm – 900 nm
Ee
20
35
mW/m2
SIR Mode
TFDU5100
9.6 kbit/s to 115.2 kbit/s, 3.0 V
l = 850 nm – 900 nm
Ee
25
40
mW/m2
Minimum Detection
Threshold Irradiance
MIR Mode
TFDS5500/TFDT5500, 3.0 V
1.152 Mbit/s
l = 850 nm – 900 nm
Ee
65
90
mW/m2
MIR Mode
TFDU5100, 3.0 V
1.152 Mbit/s,
l = 850 nm – 900 nm
Ee
85
100
mW/m2
Maximum Detection
Threshold Irradiance
VCC = 3.0 V
l = 850 nm – 900 nm
Ee
5
10
kW/m2
Logic LOW Receiver
Input Irradiance
Ee
4
mW/m2
Rise Time of Output
Signal
10% to 90%, @2.2 k
, 15 pF
tr (Rxd)
10
40
ns
Fall Time of Output
Signal
90% to 10%, @2.2 k
, 15 pF
tf (Rxd)
10
40
ns
Rxd Pulse Width of
Input pulse length 20
s, 9.6 kbit/s
tPW
1.2
10
20
s
Rxd Pulse Width of
Output Signal, 50%,
SIR mode
Input pulse length 1.41
s,
115.2 kbit/s
tPW
1.2
1/2 bit
lenght
s
Rxd Pulse Width of
Output Signal, 50%,
MIR mode
Input pulse length 217 ns,
1.152 Mbit/s
tPW
110
260
ns
Jitter, Leading Edge,
MIR mode
Input Irradiance = 100 mW/m2,
1.152 Mbit/s mode
10
ns
Latency
tL
120
s
Transmitter
IRED Operating Cur-
rent
R1 = 7.2
, VCC = 5.0 V
ID
0.4
0.55
A
Output Radiant Inten- Vcc = 5.0 V,
α = 0_, 15_
Ie
100
140
320
mW/sr
Out ut Radiant Inten
sity, (see fig. 3)
Vcc
5.0 V,
α 0 , 15
Txd = High, SD = Low, R1 = 7.2
Ie
100
140
320
mW/sr
Output Radiant Inten-
sity
Vcc = 5.0 V,
α = 0_, 15_
Txd = Low, or SD = High
(Receiver is inactive as long as SD =
High) R1 = 7.2
Ie
0.04
mW/sr
Output Radiant Inten-
sity,
Angle of Half Intensity
a
±24
_
Peak – Emission
Wavelength
lP
880
900
nm
Optical Rise Time,
Fall Time
tropt,
tfopt
10
40
ns
Optical Overshoot
10
%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TFDT6000-TR3 | 制造商:TEMIC 功能描述: |
| TFDT6500E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:2.7-5.5V Fast Infrared Transceiver Module Family |
| TFDT6501E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDT6501E-TR4 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
| TFDT6502E | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation |
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